| 학회 | 한국화학공학회 |
| 학술대회 | 2003년 봄 (04/25 ~ 04/26, 순천대학교) |
| 권호 | 9권 1호, p.942 |
| 발표분야 | 이동현상 |
| 제목 | Effects of diffusion and reaction rates in the F- CVI reactor for the preparation of C/SiC composites |
| 초록 | Mathematical modeling for the preparation of C/SiC composites from methyl-trichlorosilane by F-CVI(Forced-chemical vapor infiltration) reactor was studied. Assumed that cylindrical pores exist in the preform. Changes of concentration, pressure, and porosity with time were predicted by modeling. Along the direction of gas flow, pressure in the preform decreased sharply. At 130 min reaction time, the pore entrances were plugged. As the pore entrances were plugged, the pressure at the pore entrance increased rapidly. The time when the preform should be overturned was decided by observing the radius of pore entrance. It could be shown with mathematical modeling that a relatively uniform deposition could be obtained by overturnning the preform. |
| 저자 | 김 희1, 정귀영1, 구형회2, 백운형2 |
| 소속 | 1홍익대, 2국방과학(연) |
| 키워드 | SiC; MTS; C/SiC |
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| 원문파일 | 초록 보기 |
