| 초록 |
Chalcogenide materials such as Ge2Sb2Te5 are utilized in nonvolatile memory devices, known as phase change memories (PCMs), for its fast and reversible switching speed between amorphous and crystalline structural transformation. However, the high programming current of the PCM cell, resulting from the limtation of the bottom heater demension, is regared as a critical obstacle for low power operation. Here, we suggest a novel and facile strategy of utilizing self-structured conductive filament (CF) nanoheaters for Joule heating of chalcogenide materials. The formation of CF nanoheaters enables sub-10 nm area contact between the nanoheater and phase change materials,which significantly reduces the reset current. Especailly, the PCM cell with a single Ni filament nanoheater showed an ultra-low programming current of 20 A. Finally, phase-transition behaviors through filament type nanoheaters were directly observed by using transmission electron microscopy. |
