| 학회 | 한국재료학회 |
| 학술대회 | 2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 | 20권 1호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Ion-implantation for Selective Area Growth of GaN on Patterned Sapphire Substrate |
| 초록 | The growth of high-quality GaN template on a patterned sapphire substrate (PSS) is very important to improve luminous efficiency of GaN-light emitting diodes (LED). PSS is used for light reflection on the GaN template/sapphire interface, by means of various shape patterns such as cone-shape, pillar or parallelogram. However, the large lattice mismatch and the thermal expansion coefficient difference between GaN and PSS result in lots of misfit and threading dislocations. Additionally, the growth of different directional GaN grains at head of pattern hinders epitaxial lateral overgrowth (ELOG) of GaN template layer. This is a cause to degrade the internal quantum efficiency. Here we introduce a new approach to ELOG of high-quality GaN template on PSS using selective ion-implantation as ELOG mask instead of usual dielectric material such as SixNy or SiO2 . The selective ion-implantation at head of pattern is effective to inhibit the poly-GaN grains growth causing lots of misfit and threading dislocations. Therefore, the growth of high-quality GaN template on the PSS by selective ion-implantation can be effective to improve luminous efficiency of GaN-LED. Acknowledgement This work is supported by the LG Innotek through a project “The research of GaN epitaxial growth using sputtered AlN buffer and ion implantation” and Korea University Grant. The authors would like to thank Dr. Hyngduk Ko of KIST and Dr. Jaee-Sang Lee of KMAC who helped this project. |
| 저자 | 김대식1, 진정근2, 고형덕3, 이재상4, 변동진1 |
| 소속 | 1고려대, 2LG 이노텍(주) Chip 개발담당 선행개발팀, 3한국과학기술(연), 4한국원자력(연) |
| 키워드 | Ion-implantation; GaN; PSS; ELOG; LED |
