| 학회 | 한국재료학회 |
| 학술대회 | 2015년 봄 (05/14 ~ 05/15, 구미코) |
| 권호 | 21권 1호 |
| 발표분야 | C. 에너지 재료 |
| 제목 | Atomic-layer-deposited Zn(O,S) Buffer Layers for Cu2ZnSn(S,Se)4 Thin Film Solar Cells |
| 초록 | A solar cell is an electrical device that converts the light energy into electricity. One of the crucial parts of realizing high-performance thin-film-based solar cells is an n-type buffer layer and CdS has been widely used as a magical material for various types of absorbers. In order to increase the environmental compatibility of such solar cells, however, a device without hazardous Cd should be developed. In this regard, we investigated the possibility of Zn(O,S) as an alternative buffer layer. Zn(O,S) thin films were grown by atomic layer deposition (ALD). ALD has been highlighted as an ideal method for forming very conformal and ultrathin films on various nanostructured devices and this technique is well suited for the pinhole-free formation of buffer layers. First, structural, electrical, chemical, and optical properties of Zn(O,S) thin films were studied. This new buffer layer was applied for earth-abundant Cu2ZnSn(S,Se)4 solar cells and the highest power-conversion efficiency of ~2.7% was achieved by optimizing O/S ratio. The detailed analysis on how O/S ratio influences the device performance will be presented. |
| 저자 | Hee Kyeung Hong1, In Young Kim2, Hui Kyung Park3, Jaeseung Jo1, Gwang Yeom Song2, Jin Hyeok Kim3, Jaeyeong Heo1 |
| 소속 | 1Department of Materials Science and Engineering, 2Optoelectronics Convergence Research Center, 3Chonnam National Univ. |
| 키워드 | Atomic Layer Deposition; Zn(O; S); Cu<SUB>2</SUB>ZnSn(S; Se)<SUB>4</SUB>; Thin Film Solar Cells |
