| 초록 |
A parametric study of dry etching of NiFe, NiFeCo, MnNi, Co, Fe, and Ta with inductively coupled plasmas (ICPs) of Cl2/Ar has been carried out in terms of etch rate, etch profile, surface morphology, and magnetic properties. The ICP etching of SiO2 as a mask material was also carried out in NF3/Ar discharges. The optimum etch conditions of the etch mask, resulting in a good etch profile without deformation of photo-resist, were 600 W ICP, 75 W rf, 20 mtorr, and 50 % NF3. The etch rates of NiFeCo, Ta, NiFe, MnNi, and Fe decreased with the operating pressure. By contrast, the etch rate of Co increased up to 20 mtorr, but decreased at higher pressures. The etch rates decreased gradually with increasing the Cl2 concentration, showing maximum etch rate at ~25 % Cl2. The etch rates were also strongly affected by the ICP source power and the rf chuck power. |
