| 학회 | 한국재료학회 |
| 학술대회 | 2008년 가을 (11/07 ~ 11/07, 차세대융합기술연구원) |
| 권호 | 14권 2호 |
| 발표분야 | 전자재료 |
| 제목 | Dielectric Properties of β-SiAlON using a High Temperature Perturbation Method |
| 초록 | SiAlON ceramics show superior mechanical properties and high-temperature stability than Si3N4, which enables SiAlON ceramics to be promising materials for high temperature structural application. SiAlON ceramics have similar microstructure and properties with Si3N4, which is used for microwave applications due to microwave transparency. Therefore, SiAlON ceramics are considered as a candidate for electromagnetic window applications at high microwave frequencies. But there has been only a limited work on microwave dielectric properties of SiAlON ceramics, especially at high temperature. In this study, the dielectric properties (dielectric constant and tangent loss) of β-SiAlON were characterized by the post-resonator method at room temperature and by perturbation method from room temperature to 1200oC at 2.45 GHz, respectively. Effect of z-value was investigated with β-Si6-zAlzOzN8-z, and effect of temperature was also investigated. The results were compared with microwave dielectric properties of Si3N4, and the application of the microwave heating of SiAlON was also discussed. |
| 저자 | 성영훈, 김하늘, 김도경 |
| 소속 | KAIST |
| 키워드 | Dielectric constant; tangent loss; SiAlON; perturbation method |
