| 초록 |
Removal of surrounding effects to atomically thin material supported on flat substrate is challenging for recent semiconductor society due to intrinsic oversensitivity of the low-dimensional materials. Here, we report facile floating strategy for two-dimensional (2D) materials using generation of energetically unfavorable geometry of supporting substrate. The substrate were facilitated by high frequency support structures derived by self-assembly of block copolymer, and MoS2 is successfully separated from basal plane. Influence of substrate elimination to the MoS2 was confirmed by various analysis. A suspended monolayer MoS2 results in enhancement of emission and electron transport properties that are comparable to those of the previously reported MoS2 on h-BN. In addition, our strategy is based on ultimate reliability, demonstrating compatibility with complex architectures that have not been proven by previously reported, fully suspended architectures. |
