| 학회 |
한국고분자학회 |
| 학술대회 |
2009년 봄 (04/09 ~ 04/10, 대전컨벤션센터) |
| 권호 |
34권 1호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Nonvolatile Metal-Ferroelectric-Insulator-Semiconductor using Al/PVDF-TrFE/PTFE/Si structures |
| 초록 |
Poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE) are polymeric materials with ferroelectric properties that are of particular interest for e.g. nonvolatile memory device applications. Frictionally rubbing method of PTFE and following spin coating of PVDF-TrFE thin film resulted in the epitaxially growth of PVDF-TrFE. The existence of micron size topographic ledges and molecular structure of PTFE chains play a key role in the orientation of ferroelectric thin polymer films, confirmed by Transmission Electron Microscopy (TEM) and Grazing incidence X-ray diffraction(GIXD). Finally, we fabricated the nonvolatile Metal-Ferroelectric-Insulator-Semiconductor using Al/PVDF-TrFE/PTFE/Si structures with ultrathin ordered ferroelectric films. Rectangular shape of capacitance-voltage(C-V) hysteresis loops were obtained in Al/PVDF-TrFE/PTFE/Si diodes and we also investigated the data retention properties. |
| 저자 |
박연정, 장지연, 강석주, 박철민
|
| 소속 |
연세대 |
| 키워드 |
nonvoltale memory; MFIS; PVDF-TrFE; epitaxy
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| E-Mail |
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