| 초록 |
Metal oxide thin film transistors (TFTs) have attracted much attention because they can be applied to flexible and large scale electronic devices in next generation display fields. Herein, we have demonstrated the improved metal oxide TFTs with double-stacked semiconductor layer composed of channel layer at the bottom and buffer layer at the top at low temperature (250°C). These TFTs have excellent electrical performance due to high average field-effect mobility (~80 cm2/V·s), on-current near zero, high on-off current ratio (~109), and stability in positive-bias-test (PBT) and negative-bias-test (NBT). The channel layer increases the field-effect mobility and the buffer layer lowers the off current. We have explained in more detail why this improvement took place. Our findings highlight that the metal oxide TFTs with high performance can be yielded through double-stacked semiconductor at low annealing temperatures, and hold great promise for widespread industrial applications. |
