| 학회 | 한국재료학회 |
| 학술대회 | 2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 | 26권 1호 |
| 발표분야 | F. 광기능/디스플레이 재료 분과 |
| 제목 | High flexibility of atomic layer deposited Al2O3/In2O3 by forming quasi two-dimension electron gas and nano-crystallization |
| 초록 | Sn doped In2O3 (ITO) used as transparent electrodes mainly in displays has been developed owing to high electrical properties, but there have been clear limitations in that it has low flexibility to apply to next-generation electrodes. This study focused on the formation of two-dimensional electron gas and nano-crystallization using atomic layer deposition (ALD) of Al2O3 as a technology that can simultaneously improve conductivity and flexibility of In2O3 instead of element doping methods. The composite layers of ALD Al2O3/In2O3 on the PI substrate increased conductivity by forming oxygen vacancies and nano-crystalline through ALD Al2O3 process, and secured flexibility through the quasi-2d metallic channel and the structural bendability of nano-grain. In Angle-resolved XPS and TEM-EELS, it was confirmed that changes in the chemical binding state resulting from intermixing at the Al2O3/In2O3 interface increased the oxygen vacancies and Inx+, reduced In3+, area by more than 55% after Al2O3 deposition. In cryogenic Hall measurement, it was confirmed through Arrhenius equation that the Fermi level of single thin film In2O3 was formed off the 0.088 eV from the conduction band, while Al2O3/In2O3 was -0.098 eV offset. The rate of change in sheet resistance was around 3. The flexibility was shown as degradation of less than 20 % for 10k repetitions at 2.5 mm diameter (2.5R). In the point of interfacial engineering that simultaneously implement oxygen-vacancy control and heat treatment through ALD Al2O3, it is expected to be easily applicable to other transparent conductive oxides. Furthermore, the high passivation effect of Al2O3 and the anti-reflection characteristic have additional technological value in that stability and high permeability can be secured. |
| 저자 | Hyunwoo Kang1, Unjeong Kim1, Heecheol Shin1, Ranveer Singh2, Hyungtak Seo2 |
| 소속 | 1Department of Energy Systems Research, 2Department of Materials Science and Engineering |
| 키워드 | oxygen vacancies; two-dimensional electron gas; flexible TCE |
