| 초록 |
Many studies of graphene have shown that it has enormous potentials for next-generation technology [1]. However, its cost-efficient, reliable, and high-throughput synthesis of high-quality single-crystal graphene is highly required for practical applications of its superb properties[2]. In this paper, we introduce a new seeded growth approach for the scalable growth of high-quality single crystal of graphene on cost-effective polycrystalline metal substrates. This seeded growth involves transplantation of small single crystal seeds to large scale polycrystalline catalyst substrate and subsequent in-plane homo-epitaxial growth to a uniform single crystal graphene layer. This approach is scalable and can be used for multi-meter scale growth of single crystal graphene. In addition, by defect healing process, it is possible to ensure the significantly low density of defects on the 2D material. |
