| 초록 |
We introduce a useful patterning method for thin film positioning, which can both realize selective positioning and exempt the requirement of a subsequent etching step. This advancement is based on chemical trench with different surface energies through nanoimprint lithography. We found that area selectivity of thin films increased through temperature-controlled spin-coating, called cold spin-casting (CSC), the optimized solution temperature was –5℃. This method is applicable to a case in microscale positioning of inorganic materials such as CdSe quantum dot. Moreover, we obtained sub-10 nm block copolymer thin film formation within area-selectively positioned films of line-width of 400 nm by this CSC method. This CSC method may suggest a new way for formation of two-dimensional nanoscale complex pattern customization. |
