| 학회 |
한국재료학회 |
| 학술대회 |
2013년 가을 (11/06 ~ 11/08, 제주롯데호텔) |
| 권호 |
19권 2호 |
| 발표분야 |
F. 광기능/디스플레이 재료(Optical Functional and Display Materials) |
| 제목 |
Properties of annealed tin oxide thin films and their homojunction pn diode application |
| 초록 |
Tin oxide has good optical transmittance in the visible region and outstanding semiconductor properties. N-type SnO2 has a large optical band gap of 3.6eV and can be achieved a high electrical conductivity. But p-type SnO with a good electrical conductivity is very challenging due to its low hall mobility and meta-stable characteristic. In the present study, tin oxide thin films were prepared by rf reactive sputtering of Sn metallic target with Ar/O2 gas mixture. O2 gas flow was varied from 4scccm to 10sccm and the pressure and rf power were 0.93Pa and 30~50W respectively. The thin films were deposited at 100oC and annealed at 300oC for 1 hour in N2 environment. The conductivity of n-type SnO2 was 6.69(cm)-1 and p-type SnO was 0.05(cm)-1. The optical band gap was increased as O2 flow increased and rf power decreased. The effect on oxygen gas flow and rf power was investigated and the structural, electrical, and optical properties of tin oxide thin films were analyzed. In addition, tin oxide homojunction pn diode using p-type SnO was fabricated and the diode characteristics were evaluated. |
| 저자 |
엄요셉, 김사라은경
|
| 소속 |
서울과학기술대 |
| 키워드 |
SnO; tin oxide; homojunction diode
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| E-Mail |
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