| 초록 |
Silicon-containing photoresists are gaining increasing interest for a bilayer resist system. High resolution can be obtained because of anisotropic pattern transfer of a thin silicon-containing top layer into a thick underlying polymer film. However, the silicon-containing photoresists have to contain several functional groups for dry etch resistance, solubility change, and adhesion. Therefore, the design of the photoresists is relatively difficult and has the limits. The aim of this study is to design a new blending system that adjusts easily the properties of the imaging layer without post-exposure delay problems. Using a mercury-xenon lamp in a contact printing mode, 0.2 m line and space patterns were obtained. The results show this new platform has the potential for the next generation resists. |
