| 초록 |
Thin film solar cells have been received the great attention for the second generation of photovoltaic cells because they have advantages including low processing cost, lighter weight, flexibility, and possible roll-to-roll process in comparison to the crystalline silicon-based solar cells. Cu(In,Ga)Se2 (CIGS) thin film is one of the most promising candidates in the family of copper chalcopyrite materials for the photovoltaic application. Up to now, several methods such as sputtering, co-evaporation, electro-deposition, and spray pyrolysis have been reported for the formation of polycrystalline thin films of CIGS. In this study, the thin films of CIGS were prepared by CFM method. To investigate the annealing temperature effects, annealing temperature was varied from 200°C to 400°C. |
