| 학회 | 한국고분자학회 |
| 학술대회 | 2004년 가을 (10/08 ~ 10/09, 경북대학교) |
| 권호 | 29권 2호, p.703 |
| 발표분야 | 분자전자 부문위원회 |
| 제목 | Organic thin film transistor with initiator-free photosensitive polyimide as a gate insulator |
| 초록 | This investigation deals with the synthesis and detailed study on photoinitiator-free photosensitive polyimide gate insulator used for the organic thin-film transistors (OTFTs), one of the most important components of active matrix displays on plastic substrates. The photosensitive polyimide precursor, poly(amic acid) was prepared from aromatic dianhydride, 3,3',4,4'-benzophenone tetracarboxylic dianhydride (BTDA) and novel aromatic diamine, 7-(3,5-diaminobenzoyloxy) coumarine (DACM). Photosensitivity of the poly(amic acid) film was investigated using a high pressure mercury lamp at 280-310 nm. The pattern resolution of the photocured film was about 50 ㎛. Surface morphology of the films before and after photo-patterning process were also investigated. In addition, we have fabricated pentacene OTFTs with the photoinitiator-free photosensitive polyimide as a gate insulator. The OTFT characteristics are going to be discussed in more detail with electrical properties of the photosensitive polyimide thin film. Table 1. Characteristics of device |
| 저자 | 전지현1, 표승문1, 이무열1, 이재흥1, 이미혜1, 김정수2 |
| 소속 | 1한국화학(연), 2충남대 |
| 키워드 | OTFT; gate insulator; polyimide |
