| 학회 | 한국고분자학회 |
| 학술대회 | 2004년 가을 (10/08 ~ 10/09, 경북대학교) |
| 권호 | 29권 2호, p.433 |
| 발표분야 | 분자전자 부문위원회 |
| 제목 | Low temperature processable inherently photosensitive polyimide as a gate insulator for organic thin film transistors |
| 초록 | Low temperature processable inherently photosensitive polyimide was prepared from a dianhydride, 3,3',4,4'-benzophenone tetracarboxylic dianhydride and aromatic diamines, 4,4'-diamino-3,3'dimethyl-diphenylmethane through polycondensation reaction, followed by a chemical imidization method. The negative type photoresist properties and the possibility of photo patternability of the polyimide were investigated. The resolution of the negatively patterned film was as low as 10 ㎛. The photosensitive polyimide gate dielectric layer cured at 180℃ is used to fabricate flexible organic thin film transistors with pentacene as an active semiconductor on polyethersulfone substrates. The performance of the pentacene OTFTs with the polyimide after patterning was relatively poorer than that of OTFTs with the polyimide before patterning due to the poor interface formation between a semiconductor and gate insulator and small grain size of pentacene deposited on the polyimide gate dielectric. It is believed that the performance OTFTs with the polyimide after patterning will be improved by optimizing the photo-patterning processes and device fabrication processes. The OTFT characteristics are going to be discussed in more detail with the electrical properties of the thin polyimide film. Table 1. The characteristics of the low temperature processable photosensitive Table 2. The performance of the pentacene OTFTs with the polyimide film |
| 저자 | 손현삼1, 표승문1, 이윤정1, 최길영1, 이미혜1, 홍성권2 |
| 소속 | 1한국화학(연), 2충남대 |
| 키워드 | OTFT; Gate insulator; polyimide |
