| 학회 | 한국공업화학회 |
| 학술대회 | 2019년 가을 (10/30 ~ 11/01, 제주국제컨벤션센터(ICC JEJU)) |
| 권호 | 23권 2호 |
| 발표분야 | 포스터_정밀화학 |
| 제목 | Development of New Ethcing Gas for Cu Dry Etching and Dry Etching Process with Small Chelators |
| 초록 | An etching process is one of the important processing in semiconductor manufacturing. Dry etching is a process of making a circuit on a substrate with gases molecules in high-density plasma conditions. Br2 and Cl2 are the most common gases in modern copper dry etching procedure for elimination of substrate materials at high temperature. Although Br2 and Cl2 are regarded as useful gases for making a complex with a copper, copper complex remains on the substrate due to low volatility and it makes difficult to form exquisite patterning. To overcome these problems, development of volatile gases is required even after making a complex with copper under low temperature in a dry etching process. Here we introduced many potential volatile gases for a dry etching process. These gases have a high affinity with copper and have a low molecular weight so that evaporate under relatively low temperature. |
| 저자 | 김철희, 정지원, 임은택, 김동욱 |
| 소속 | 인하대 |
| 키워드 | Copper Ethching; Semiconductor |
