| 학회 |
한국재료학회 |
| 학술대회 |
2019년 가을 (10/30 ~ 11/01, 삼척 쏠비치 호텔&리조트) |
| 권호 |
25권 2호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Properties of P-type SnO Thin Film Transistors With Varying Deposition Temperature Conditions |
| 초록 |
It is widely known that p-type oxide materials have inferior electrical properties than n-type oxide materials. In order to solve this problem, this study tested p-type oxide TFTs using SnO thin films. p-type oxide TFTs were fabricated using thermal evaporation and DC sputtering at the deposition temperature of 200 ° C thorough 350 ° C. Properties of p-type oxide TFTs using SnO thin films are measured changing the driving voltage, which showed the correlations between the deposition parameters and the electrical properties. The electrical characteristics of p-type TFT like mobility and resistivity for each deposition condition were discussed to find the optimized process parameters for future research. |
| 저자 |
조현철, 박동희, 이용복, 이전국
|
| 소속 |
KIST |
| 키워드 |
SnO; p-type oxide semiconductor; TFT
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| E-Mail |
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