| 초록 |
Graphene has significant potentials for electronic applications owing to its amazing carrier mobility. Moreover flexibility of graphene is one of highest merits for flexible electronic devices. But application of graphene for Field Effect Transistors is hindered because of semi metal property with zero band gap of graphene. It has been suggested that a band gap can open up by fabrication graphene nanostructures of confined geometry such as nanoribbons and nano mesh. Theoretical calculations suggest the band gap of GNRs scales inversely with their width, and a width in the sub-10 nm regime is required to achieve semiconducting property of graphene. However preparing GNRs below 10nm is almost impossible by conventional lithography. Our group suggests effective method for preparing GNRs below 15nm in large scale by using secondary sputtered lithography which can make ~15nm line patterns. Additional etching can reduce the width of GNRs below 10nm opening up band gap of graphene. |
