| 초록 |
Photoresist is an essential material for semiconductor patterning because change in its chemical structure upon irradiation induces solubility change in a specific solvent. Conventionally crosslinking reaction and polarity changes due to deprotection chemistry have been used for the patterning. Azobenzene groups absorbs UV light which corresponds to the energy gap of the π-π* transition. And reversible photo isomeric transition occurs between trans and cis forms. In this study, poly(methyl methacrylate) (PMMA) with azobenzene pendant groups were synthesized. The photoisomerization of the azobenzene pendant groups changes the conformational structure of the polymer. Therefore, it was expected to give solubility change of the polymer. Detailed results will be discussed. |
