| 학회 | 한국재료학회 |
| 학술대회 | 2008년 봄 (05/22 ~ 05/23, 상록리조트) |
| 권호 | 14권 1호 |
| 발표분야 | 전자재료 |
| 제목 | Dielectric properties of β-SiAlONs at high temperature using perturbation method |
| 초록 | SiAlON shows superior mechanical properties and high-temperature stability than Si3N4, which enables SiAlON to be promising materials for high temperature structural application. SiAlON has similar microstructure and properties with Si3N4, which is used for microwave applications due to microwave transparency. Therefore, SiAlON is considered as a candidate for electromagnetic window applications at microwave frequencies. But there has been only a limited work on microwave dielectric properties of SiAlON ceramics. In this study, the dielectric properties (dielectric constant and tangent loss) of β-SiAlON were characterized by the post-resonator method at room temperature and by perturbation method from room temperature to 1200oC at 2.45 GHz, respectively. Effect of z-value was investigated with β-SiAlON, and effect of temperature was also investigated. The results were compared with reference data of Si3N4, and the application on the microwave heating will be discussed. |
| 저자 | 성영훈, 김하늘, 김도경 |
| 소속 | KAIST 신소재공학과 |
| 키워드 | Silicon nitride; dielectric constant; tangent loss; perturbation |
