| 초록 |
The thin film transistors (TFT) using amorphous oxide semiconductor (AOS) as active layer has benefit from their high electron mobility and transparency. In order to increase efficient of AOS forming process, sol-gel method is concerned and studied. Sol-gel method is known to low-cost, high throughput and having a good uniformity. In this study, Indium gallium zinc oxide (IGZO) TFT was successfully formed by sol-gel method. And to enhancement of IGZO TFT, self-assembled monolayer (SAM) was employed for surface modification between active layer and insulator layer. The SAM modification brings higher electron mobility and lower switching speed than reference. To investigate these electrical enhancements, X-ray photoelectron spectroscopy is used for finding bonding states and monochromatic photonic capacitance (MPCV) is adopted to figure out subgap density of states (DOS) of IGZO film. As a result, there are low defect, high oxygen vacancy bonding ratio and less shallow trap density of IGZO film with SAM modification. |
