| 학회 | 한국재료학회 |
| 학술대회 | 2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 | 22권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Characteristics of Si:ZrO2 deposited by ALD using CP-Zr |
| 초록 | Dynamic random access memory (DRAM) is one of devices leading to memory semiconductor industry due to its features such as high density, high performance and superior cost effectiveness. DRAM unit cell consists of one transistor and one capacitor. As scaling down feature size, it has been essential to obtain the low leakage current and fixed capacitance because they are directly related to device performance and reliability. Therefore, it is necessary to replace the silicon oxide with high-k dielectric materials. Among various high-k materials, ZrO2 has attracted considerable attention due to its high electric constant and wide band gap. However, it has problems such as large leakage current. Si-doped ZrO2 has proposed to reduce leakage current. In this study, we investigated current mechanism and electronic structure of Si-doped ZrO2 thin films. We deposited Si-doped ZrO2 thin films using atomic layer deposition (ALD) due to its advantages such as excellent step coverage, low process temperature and high film quality. Precursor and reactant gas of ZrO2 ALD are tris(dimethylamino) cyclopentadienyl zirconium and ozone, respectively. Precursor for Si doping is tris(dimethylamino)silane (3DMAS). Leakage current density was investigated by current-voltage (I-V) measurement. Auger electron spectroscopy (AES), and time of flight-secondary ion mass spectrometry (ToF-SIMS) were utilized to understand chemical composition of Si:ZrO2 thin film. |
| 저자 | 이건영, 장우출, 김현정, 임희우, 전형탁 |
| 소속 | 한양대 |
| 키워드 | Capacitor; tris(dimethylamino) cyclopentadienyl zirconium (Cp-Zr); Tris(dimethylamino)silane (3DMAS); high-k; Atomic Layer Diposition (ALD) |
