| 학회 | 한국재료학회 |
| 학술대회 | 2009년 봄 (05/21 ~ 05/22, 무주리조트) |
| 권호 | 15권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | Photoluminesence study of SiOxcoated GaN nanowires |
| 초록 | We have fabricated SiOx-coated GaN nanowires, by sputtering with Si target. The product has wire-like morphology, regardless of SiOx-coated and subsequent annealing. EDX elemental mapping results have coincided with what can be expected for the SiOx-coated GaN nanowires. HR TEM image and line profile spectrum reveal that the smooth coating layer of SiOx on GaN core nanowires. From SAED pattern it is investigated that the core nanowires correspond to a hexagonal GaN structure, whereas the sheath layer is amorphous. Gaussian fitting analysis on the photoluminescence spectra of GaN-core/SiOx-sheath nanowires have exhibited two emission bands peaked at 2.4 eV and 2.9 eV, respectively. We observed that the relative intensity of 2.9 eV-peak to 2.4 eV-peak was increased by the thermal annealing. This result will significantly contribute to the potential applications of SiOx-sheathed coaxial 1D nanostructures to a variety of nanodevices. |
| 저자 | 김현우, 김효성, 이종우, Mesfin Abayneh Kebede |
| 소속 | 인하대 |
| 키워드 | GaN; nanowires; SiOx; Sputtering |
