| 학회 |
한국재료학회 |
| 학술대회 |
2005년 봄 (05/26 ~ 05/27, 무주리조트) |
| 권호 |
11권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
Ni(60Å)/Cu/Si(100) 박막의 자성에 대한 1 MeV C+ 이온 방사 효과 |
| 초록 |
The effects of 1 MeV C ion irradiation with various ion dose and flux on epitaxial Ni(60Å)/Cu/Si(100) which possessing perpendicular magnetic anisotropy (PMA). After ion irradiation, the magnetic and structural properties were analyzed by the magneto-optical Kerr effect (MOKE) and grazing incident diffraction (GID). 1 MeV C ion irradiation was performed into Ni/Cu thin films with various ion doses ranged from 1 to 7.5x1015 ions/cm2. As increasing ion dose, the coercivity of Ni/Cu thin film decreased from 16.2 %(1x1015 ions/cm2) to 72.1 %(7.5x1015 ions/cm2). It means that the spin reorientation toward in-plane magnetization induced by ion irradiation depends on the ion dose. It is known that the magnetic anisotropy of Ni/Cu is closely related to the magnetoelastic anisotropy of strained Ni film due to the lattice mismatch with the Cu(001) layer. From the GID measurement, as increasing ion dose, the peak position of Ni moves gradually toward the bulk Ni(200) peak position and the half width of the Cu(200) peak is getting narrow. It implies the fact that the relaxation of the strain and grain growth induced by ion irradiation is a function of ion dose. In order to investigate ion flux effect, 1 MeV C + irradiation with a dose of 1x1016/cm2 was carried out by varying ion flux (100, 380 nA/cm2). As increase of ion flux, the coercivity of Ni/Cu thin film decreased and spin orientation more rapidly changed from PMA to in-plane. It is concluded that ion dose and flux plays an important role of modification of the magnetic properties of Ni/Cu thin film. |
| 저자 |
J.H. Lee1, S.W. Shin2, C.N. Hwang3, I.H. Choi4, J.H. Song5, T.G. Kim5
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| 소속 |
1Korea Univ. / KIST, 2Yonsei Univ. / KIST, 3Yonsei Univ., 4Korea Univ., 5KIST |
| 키워드 |
ion irradiation; perpendicular magnetic anisotropy(PMA)
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| E-Mail |
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