| 학회 |
한국공업화학회 |
| 학술대회 |
2021년 봄 (05/12 ~ 05/14, 부산 벡스코(BEXCO)) |
| 권호 |
25권 1호 |
| 발표분야 |
포스터-나노 |
| 제목 |
Conduction path limitation in multilayer Rhenium disulfide (ReS2) field-effect transistor by gate oxide traps |
| 초록 |
Rhenium disulfide (ReS2) has a relatively larger interlayer resistance (Rint) than other two-dimensional (2D) transition metal dichalcogenide (TMDC) materials such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2). When the interlayer resistance interacts with carrier density distribution according to Thomas-Fermi charge screening (λTF), the dominant electron conduction layer varies with the electric field. Herein, we induced a lot of traps at the SiO2 interface with a positive gate voltage (VG) stress. We show how the conduction centroid changes in the layered materials by comparing peak shift of transconductance (gm) and threshold voltage (Vth) corresponding to the top and bottom layers which are extracted by second derivative method (SDM). These findings provide a detailed understanding of the bias instability of ReS2 field effect transistor, as well as in-depth analysis of layered materials. |
| 저자 |
김철민, 김도윤, 김규태
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| 소속 |
고려대 |
| 키워드 |
Rhenium disulfide; multilayer; carrier transport; oxide defect; carrier mobility
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| E-Mail |
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