| 초록 |
There is increasing demands of material developments for high electrical performance, novel mechanical functionality, high electrical stability, and exotic chemical stability under harsh condition. Although the organic materials and inorganic materials have been investigated with diverse approaches, the combination of these materials as hybrid materials might result synergetic effects for unprecedented properties. To achieve the stabilization and control of the electrical properties in solution‐processed amorphous‐oxide semiconductors (AOSs) for the realization of cost‐effective, high‐performance, large‐area electronics, we employ a multifunctional organic‐semiconductor (OSC)/a solution‐processed thin‐film hybrid structure. As an electrically active impurity blocking layer, the OSC layer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper‐ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. Furthermore, the proper design of organic/inorganic hybrid structure resulted exceptional electrical stability under harsh high energetic proto ion irradiation, which makes our device promising for aerospace application. Finally, the unique superlattice structure of hybrid materials resulted exception mechanical stability for flexible electronic applications. |
