| 학회 |
한국공업화학회 |
| 학술대회 |
2016년 봄 (05/02 ~ 05/04, 여수 엑스포 컨벤션) |
| 권호 |
20권 1호 |
| 발표분야 |
나노_포스터 |
| 제목 |
Electrical Properties of Graphene Field-Effect Transistors Depending on Doping Location and Dual Doping |
| 초록 |
Graphene field-effect transistors can be doped by p-type or n-type molecular doping materials. Molecular doping materials improved electrical properties of graphene field-effect transistors. We studied that different location of n-doping on graphene resulted different doping effect. And this effect influenced the device performance. In addition, dual doping where the molecular doping materials are located both on and under the graphene active layer was studied. Moreover, we observed that the molecular n-type doping materials was unstable. So it can lose its n-type doping ability and even serve as p-type doping materials under specific conditions. Our results provide insights into the strategies to selectively adjust and improve the performance of graphene field-effect transistors utilizing the molecular doping concept. |
| 저자 |
김용희1, 이은광2, 박은엽2, 박철희1, 오준학1
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| 소속 |
1포항공과대, 2울산과학기술대 |
| 키워드 |
graphene; molecular doping; transistor; dual doping; doping location
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| E-Mail |
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