| 학회 |
한국공업화학회 |
| 학술대회 |
2015년 봄 (04/29 ~ 05/01, BEXCO (부산)) |
| 권호 |
19권 1호 |
| 발표분야 |
나노_포스터 |
| 제목 |
Effects of Doping Location in Graphene Field-Effect Transistors |
| 초록 |
Reliable p-type or n-type doping on graphene field-effect transistors was carried out using molecular dopants. Molecular dopants exhibited the enhancement of performance of graphene FETs compared to that of pristine graphene. In addition, dual doping where the molecular dopants are located both on and under the graphene active layer was investigated. The doping location played an important role in charge transport behaviors of graphene FETs and the order of doping process on graphene also critically affected the device performance. Moreover, we observed that the molecular n-type dopant can lose its n-type doping power and even serve as p-type dopant under specific conditions. |
| 저자 |
이은광1, 박은엽1, 박철희2, 권오영2, 오준학2
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| 소속 |
1울산과학기술대, 2포항공과대 |
| 키워드 |
graphene; molecular doping; transistor; dual doping; doping location
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| E-Mail |
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