| 초록 |
Transparent conducting oxide (TCO) is one of crucial components of a solar cell device. Recent development of bifacial CIGS device is hindered by the degradation of TCO layer due to high substrate temperature of CIGS deposition process. Zinc-tin oxide (ZTO) is one of promising material candidates for this application due its stability at high temperature, good conductivity, high transparency, and wide-bandgap. Target powers were varied in order to deposit films with composition of stoichiometric Zn2SnO4 as the phsae has the suitable characteristic for TCO layer. A substrate temperature of 300° C was kept to promote crystallization of Zn2SnO4 phase, while the deposition time was set for 60 minutes. The properties were characterized by SEM-EDS, GI-XRD, AFM, UV-Vis-NIR spectroscopy and Hall-Effect measurement. Lowest resistivity of around 4.8 x 10-2 ohm.cm was obtained by films that has an amorphous nature with composition near to the ZnSnO3 stoichiometric. The low resistivity was obtained due to combination of both increasing carrier concentration and carrier mobility. |
