| 초록 |
The carbon nitride nanostructures such as amorphous carbon nitride films, carbon nitride nanotubes and wires have become of interest in light-emitting materials, because of their excellent photoluminescence properties. The carbon nitride nanostructures were fabricated by plasma enhanced chemical vapor deposition(PECVD) with a mixture of CH4, N2 and H2 gases. The α-CNx films were grown on Si(100) at room temperature were investigated by FT-IR and showed Si-N peak at 430cm-1 and C=N peak at 1640-1670cm-1. Carbon nitride nanotubes and wires were grown on Ni-coated Si(100) at 600℃. The shapes of nanotubes and wires were dependent of growth time. Structural properties of the carbon nitride nanotubes and wires were observed by field-emission scanning electron microscope(FESEM) and carbon-bonding structure was investigated by Raman spectra. G peak at 1590~1600cm-1 and D peak at 1350~1360cm-1 were observed with Raman spectra. |
