| 학회 |
한국고분자학회 |
| 학술대회 |
2003년 가을 (10/10 ~ 10/11, 부경대학교) |
| 권호 |
28권 2호, p.12 |
| 발표분야 |
특별 심포지엄 |
| 제목 |
AFM Anodization Lithography on Organic Resists |
| 초록 |
AFM anodization lithography is a patterning method using an electrochemical growth of oxide on the area where an AFM tip is located. It was first accomplished on a bare Si wafer using natural silicon oxide as a resist. When this method was applied to the surface of organic resists, several advantages could be obtained by designing the components of an organic resist. For example, linewidth can be effectively reduced when the organic layer mixed with different surface group is employed as a resist. Other advantages of the lithography on organic resists are enhancement in lithographic scan speed up to 2 mm/sec and accomplishment of positive or negative patterning selectively. These improved results emphasize the importance of electrochemistry on Si surface via organic layer(s) under 107 V/cm or higher electric field. In this seminar it will be presented how chemical information on organic resists can contribute to achievement of two ultimate goals in AFM lithography such as (i) reducing linewidth and (ii) enhancing throughput. It will be also discussed how this lithography can contribute to fabrication of nano-sized device. |
| 저자 |
이해성 |
| 소속 |
한국기초과학지원(연) |
| 키워드 |
AFM anodization lithography |
| E-Mail |
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