| 학회 | 한국재료학회 |
| 학술대회 | 2006년 가을 (11/03 ~ 11/03, 수원대학교) |
| 권호 | 12권 2호 |
| 발표분야 | 에너지 환경재료 |
| 제목 | Electronic Transport Properties of In-filled CoSb3 |
| 초록 | In-filled CoSb3 skutterudites (InzCo4Sb12: 0≤z≤0.3) [1,2] were successfully synthesized by the encapsulated induction melting and post-annealing process. Seebeck coefficient, electrical resistivity and thermal conductivity were measured in the range from 300 K to 700 K, and thermoelectric figure of merit was evaluated. The Hall effect measurement was carried out in a constant magnetic field (1T) and electric current (50 mA) at 300 K. Hall coefficient (RH), carrier mobility (μH) and carrier concentration were determined. Seebeck coefficient and Hall coefficient confirmed that all the In-filled samples are n-type conducting. The temperature dependence of electrical resistivity suggests that InzCo4Sb12 is a highly degenerate semiconducting material. The optimum filling fraction (z) of In to CoSb3 was found to be 0.25. Acknowledgments: This work was supported by the Regional Innovation Center (RIC) Program conducted by the Ministry of Commerce, Industry and Energy of Korean Government. [1] T. He, J. Chen, H.D. Rosenfeld, M.A. Subramanian, Chem. Mater., 18 (2006) 759. [2] K. Akai, H. Kurisu, T. Moriyama, S. Yamamoto, M. Matsuura, Proc. 17th Intl. Conf. Thermoelectrics (1998) 105. |
| 저자 | Jae-Yong Jung1, Soon-Chul Ur2, Il-Ho Kim1 |
| 소속 | 1Department of Materials Science and Engineering/ReSEM, 2Chungju National Univ. |
| 키워드 | Thermoelectric; Skutterudite |
