| 학회 | 한국재료학회 |
| 학술대회 | 2008년 봄 (05/22 ~ 05/23, 상록리조트) |
| 권호 | 14권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | Small Molecular Organic Nonvolatile Memory Fabricated with Cu Electrode |
| 초록 | Recently, memory devices are becoming scale-down and high integration. Accordingly, Cu is alternating Al for the reduction of resistive capacitive (RC) delay, low power consumption by low driving voltage. So, we motivated such effect and fabricated small molecular organic nonvolatile memory using Cu electrode. We experiment on the device fabricated with sandwich structure of Cu / Alq3 (Aluminum tris(8-hydroxyquinoline)) / Ni nanocrystals surrounded by NiO / Alq3 / Cu. Electrical characteristics of the device cell showed very high current level and cannot confirmed bistable memory characteristics. We expected the reasons that interface property such a surface roughness or Cu ion diffusion from Cu electrode to organic layer (Alq3). So, we tried to improve interface property and form Cu oxide for preventing Cu ion diffusion using O2 plasma treatment during 30 seconds after depositing bottom Cu electrode. This device cell showed memory characteristics including Vth of ~1.2 V, Vp (program) of ~2 V, Ve (erase) of ~4.2 V and memory margin ( Ion/Ioff ratio ) of ~1.25X102. Finally, we discuss these results through comparison of atomic force microscopy (AFM) analysis and I-V characteristics of small molecular organic nonvolatile memory with Cu electrode, Al electrode and O2 plasma processed Cu, Al electrode pair. Acknowledgement : This research was supported by national research program for 0.1 Terabit Non-volatile Memory Development sponsored by Korea Ministry of Commerce, Industry and Energy. |
| 저자 | Kwang-Hee Park1, Jae-Chul Ryu2, Young-Hwan Oh3, Jea-Gun Park4 |
| 소속 | 1Department of Electrical & Computer Engineering, 2Tera-bit Nonvolatile Memory Development Center, 3Hanyang Univ., 4Seoul |
| 키워드 | organic; memory; Cu |
