| 학회 |
한국화학공학회 |
| 학술대회 |
2006년 가을 (10/27 ~ 10/28, 고려대학교) |
| 권호 |
12권 2호, p.2535 |
| 발표분야 |
재료 |
| 제목 |
The effect of H2 content on characteristics of zinc oxide thin films on a poly ethylene terephthalate substrate prepared by ECR-MOCVD |
| 초록 |
ZnO films were prepared on poly ethylene terephthalate (PET) substrate at room temperature by the electron cyclotron resonance – metal organic chemical vapor deposition (ECR-MOCVD) system. Zinc oxide falls under the classification of transparent conductive oxides. The typical optical transmittance of Zinc oxide is 90% in the visible wavelength region. Though stoichiometric ZnO film is an insulator, due to the presence of internal defects such as Zn interstitials and oxygen emptinesses, it exists as an n-type conductor. The other important property of ZnO which could be used by the optical field is its photon energy (eV). ZnO films have photon energy (eV) of 3.25eV. The additional advantage of being a photon energy (eV) semiconductor has increased the probability of using ZnO film for short wavelength optical applications. Therefore, ZnO films on PET with good interfacial properties could be prepared by ECR-MOCVD. |
| 저자 |
박지훈1, 변동진2, 이중기1
|
| 소속 |
1한국과학기술(연), 2고려대 |
| 키워드 |
ECR-MOCVD; ZnO; TCO; electrical resistivity; solar cells
|
| E-Mail |
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| 원문파일 |
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