| 학회 |
한국고분자학회 |
| 학술대회 |
2009년 가을 (10/08 ~ 10/09, 광주과학기술원 오룡관) |
| 권호 |
34권 2호 |
| 발표분야 |
에너지변환 및 저장시스템(분자전자 부문위원회) |
| 제목 |
Next-generation solarcells usingSi and Si1-xGex nano- and microwire arrays |
| 초록 |
Silicon wire-based solar cells are one of the attractive candidates for next-generation photovoltaic devices; however, Si has a relatively weak absorption in infrared region, alloying with Ge allows for the useful range of the solar spectrum spanning into a longer wavelength band due to a lower bandgap of Ge. Here, I present the vertical Si and Si1-xGex wires fabricated by metal-assisted electroless etching at a large wafer scale. Shallow junctions could be formed using plasma immersion ion implantation (PIII) and spin on doping (SOD) for making a radial p-n junction of wire-based solar cells. Scanning electron microscope (SEM) image of the Si and Si1-xGex wire arrays revealed the periodic, uniform arrays of a vertical wire which were patterned using a 300-nm-thick oxide mask with a hole size of 2 um and 4 um pitches. The diameter and a length of these wires are ~2 and ~20 um, respectively. |
| 저자 |
이정호 |
| 소속 |
한양대 |
| 키워드 |
silicon; solar cell; nanowire; microwire;
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| E-Mail |
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