| 학회 | 한국재료학회 |
| 학술대회 | 2009년 봄 (05/21 ~ 05/22, 무주리조트) |
| 권호 | 15권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | Characterization of polycrystalline Si thin films prepared with direct negative Si ion beam deposition |
| 초록 | Polycrystalline silicon (Poly-Si) thin films were deposited on glass substrate by direct negative Si ion beam deposition. The glass substrate temperature was kept constant at 500℃ for all depositions. Prior to deposition, the ion energy spread and negative Si ion to atom arrival ratio as a function of ion bean energy were evaluated. The ion energy spread was less than 10% with regardless of ion energy and ion to atom arrival ratio increased proportionally from 1.3 to 1.6 with ion beam energy. From X-ray diffraction patterns, it may concluded that the Poly-Si films could be grown with ion energy of 50 eV and grain size also can be controlled by adjusting the Si ion beam energy. Atomic force microscopy images show that the relatively flat surface can be obtained at 50 eV of Si ion energy. However surface average roughness increased with ion beam energy. |
| 저자 | 정철우, 김대일 |
| 소속 | 울산대 |
| 키워드 | Ion beam deposition; Silicon; XRD; AFM |
