| 학회 |
한국재료학회 |
| 학술대회 |
2009년 봄 (05/21 ~ 05/22, 무주리조트) |
| 권호 |
15권 1호 |
| 발표분야 |
에너지환경재료 |
| 제목 |
A study of optoelecrical properties of ITO thin films with post deposition electron beam bombardment |
| 초록 |
Transparent and conducting indium tin oxide (ITO) thin films were prepared on glass substrates by a RF magnetron sputtering without intentional substrate heating. The RF (13.56MHz) is applied to ITO. The thickness of ITO films were kept constantly at 100 nm. In order to consider the effect of post deposition electron beam (E-beam) bombardment on the physical and optoeletrical properties of ITO films at acceleration voltage (grid voltage) ranging from 300 V to 900 V. The plasma discharge power was 300W, constantly. The temperature was rising above 552 K at 900 V. Optical transmittance, electrical resistivity, crystallinity, surface morphology and roughness of the films were analyzed with UV-vis spectrophotometer, hall effect measurement, X-ray diffraction (XRD), scanning electron microscope (SEM) and atomic force microscope (AFM). The annealed films have a poly-crystalline structure with (222), (400) and (440) planes at 900 V. And it's resistivity was decreased from 1.42Ⅹ10-3 to 6.04 Ⅹ10-4 Ω㎝. The optical transmittance was increased from 89.10% to 90.21% at 550nm. |
| 저자 |
Joo-Hyun Chae1, Chang-Ho Shin2, Cheol-Woo Jeong1, Deail Kim2
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| 소속 |
1School of material Science and Engineering, 2Univ. of Ulsan |
| 키워드 |
Indium tin oxide; sputtering; electron beam bombardment; annealing
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| E-Mail |
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