| 학회 |
한국재료학회 |
| 학술대회 |
2009년 봄 (05/21 ~ 05/22, 무주리조트) |
| 권호 |
15권 1호 |
| 발표분야 |
전자재료 |
| 제목 |
Effect of the dopant on the properties of ZnO thin films prepared by RF magnetron sputtering system |
| 초록 |
Dopants such as Al, Ga and In doped ZnO thin films were prepared on glass substrate by RF magnetron sputtering system at room temperature, RF power of 175W, working pressure of 6mTorr and doping concentration of 3wt %. The annealing processing was carried out in vacuum atmosphere at 400°C for 2hours. The effects of different dopants on structural, electrical and optical properties of thin films were investigated. Regardless of a dopant, thin films were grown as a polycrystalline hexagonal wurtzite phase with the c-axis preferred out-of-plane orientation. After annealing, regardless of a dopant, the electrical resistivity of thin films decreased, the average transmittance of thin films increased from 85 % to 92 % and the optical band gap of thin films increased. The lowest resistivity and the widest optical band gap were obtained at Ga doped ZnO and Al doped ZnO respectively. This trend is not changed before and after annealing. |
| 저자 |
Kyu Ung Sim1, Seung Wook Shin2, Doo Sun Cho1, Jon Ha Moon2, Jin Hyeok Kim1
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| 소속 |
1Department of Material Science and Engineering, 2Chonnam National Univ. |
| 키워드 |
dopant doped ZnO; vacuum annealing; RF magnetron sputtering; thin film
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| E-Mail |
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