| 초록 |
Nanoimprint lithography (NIL) is the one of the promising nanolithographic techniques due to its low cost, simple process, and great precision. We propose novel hybrid resists containing diazoketo groups for high performance of the NIL process. Polyhedral oligomeric silsesquioxane (POSS), which induces high thermal stability and good mechanical property, is modified with diazoketo derivatives for photosensitivity. The obtained hybrid resists possess a variety of characteristics desirable for UV-NIL, such as high sensitivity, low volumetric shrinkage, good release property, and excellent dry-etch resistance. In addition, the photo-polymerization can be performed under UV irradiation in normal atmosphere without any additives. Based on these characteristics, the optimized components are evaluated for the UV-NIL test. |
