| 초록 |
The effects of sulfurization temperature on CuIn(Se,S)2 (CISeS) thin film solar cell have been investigated. 1㎛-CuInSe2 layer was deposited on Mo/SLG(soda lime glass) at room temperature by electrodeposition method. To form CuIn(Se,S)2 thin film, thin films were annealed in 5% H2S-95% Ar atmosphere at 425-600℃. As the sulfurization temperature increased, the grain growth of CISeS films was improved and the ratio of Se/S decreased, then the optical bandgap was close to ideal value for solar cell (~1.4eV). However, MoSe2/MoS2 layers appeared at high temperature (≥500℃) and the film morphology was getting more porous with increasing temperature. As a result, the conversion efficiency decreased as the sulfurization temperature increased, and the maximum value of the conversion efficiency was 2.32% at 425℃. |
