| 초록 |
Composite nanowires were synthesized by heating a mixture of GaN and In powders. The nanowire diameter tends to increase with increasing growth temperature in the range of 600-800 ºC. XRD, lattice-resolved TEM, SAED and EDX show that both the nanowire stem and tip parts consist of GaN and InN structures. The TEM-EDX investigation show that the relative amounts of GaN and InN phases are dependent on the growth temperature and location in the nanowire (i.e. stem or tip). At the tip, the formation of an InN phase tends to be favorable at 600ºC, whereas the InN phase reduces at 700ºC. The possible growth mechanism of the composite nanowires was discussed including the reason for the compositional changes. The existence of a composite (GaN, InN) particle at the tip suggests that the growth mechanism is dominated by a self-catalytic VLS process. Raman and PL spectra suggest the presence of an InN and GaN phase in the composite nanowires. By choosing the appropriate source materials, this method can be extended and exploited to produce nanowire-nanoparticle composites of other materials [To be published in Chem. Eng. J] |
