| 학회 |
한국화학공학회 |
| 학술대회 |
2011년 봄 (04/27 ~ 04/29, 창원컨벤션센터) |
| 권호 |
17권 1호, p.712 |
| 발표분야 |
재료 |
| 제목 |
The Current Transport Characteristics of Ti/ZnO Nanowire Schottky Diode at High Temperatures |
| 초록 |
In the present work, we report current transport characteristics of Ti/ZnO nanowire Schottky diode at high temperatures. ZnO nanowires (NWs) were grown onto p-type Silicon (Si) via thermal evaporation process by using metallic Zn powder in the presence of oxygen. To fabricate Ti/ZnO nanowire Schottky diode, we define two-terminal Ti/ZnO contact configurations along the length of selected ZnO nanowires (NWs) by using Raith ELPHY Plus (Raith GmbH) electron beam lithography (EBL). Typical spacing between contacts was 2 ~ 4 μm. ZnO nanowire Schottky diodes have been investigated by means of I-V characterization technique at various temperatures between 297 and 417 K. It is found that the ideality factor n of the diode decreases with increasing temperature and Schottky barrier height (SBH) increases with increasing temperature. The corresponding SBH increases all through the temperature range. A thermal emission (TE) model with a Gaussian distribution of SBHs explained though ZnO nanowire to responsible for the electrical behavior at temperature 297 ~ 417 K. the effective Richardson constant is determined to be 32 A cm-2 K-2 in the theoretical value. ZnO nanowires contacted by Ti/Au can serve as the future devices. |
| 저자 |
박용규, Soumen DAS, 김진환, 최한석, 한윤봉
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| 소속 |
전북대 |
| 키워드 |
ZnO nanowire; Schottky diode
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| E-Mail |
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| 원문파일 |
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