| 학회 | 한국화학공학회 |
| 학술대회 | 2012년 가을 (10/24 ~ 10/26, 부산 BEXCO) |
| 권호 | 18권 2호, p.2351 |
| 발표분야 | 재료 |
| 제목 | Temperature dependence of Optoelectronical properties of CuInSe2 Crystals |
| 초록 | Photoluminescence (PL) is a widely used method to study the defect structure in semiconductor materials. PL spectra of CIS crystals and thin films are very sensitive to the deviation from the ideal stoichiometry. Many researchers have measured PL of CIS as a function of the Cu/In ratio. These studies have shown that the emission spectra for Cu- and In-rich samples are dominated by different types of recombination. In this study, PL properties of stoichiometric CuInSe2 crystals are grown by the low temperature solution method. Several lines from two different types of gas lasers, emitting at 325 nm(He-Cd laser), 488 nm, 514 nm (Argon-ion laser) were used. And we present a detailed analysis of the temperature and the excitation dependence of the band in CIS and propose improvement for this PL measurement data analysis. This study was supported by the Human Resources Development Program of Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant (No 20104010100580) funded by the Korean Ministry of Knowledge Economy. |
| 저자 | 이형민, 이효상, 김현수, 박진호 |
| 소속 | 영남대 |
| 키워드 | CISe2; Photoluminescence; Growth Temperature |
| 원문파일 | 초록 보기 |
