| 학회 | 한국재료학회 |
| 학술대회 | 2004년 봄 (05/14 ~ 05/14, 강릉대학교) |
| 권호 | 10권 1호 |
| 발표분야 | 금속 |
| 제목 | NiFe/FeMn/Al/NiFe 다층박막에서 상부층 NiFe 표면 에칭 효과 |
| 초록 | FM/NM/FM structure is the basic Spin valve structure, and the magnetization of one of FM layers in this trilayer is pinned by antiferromagnetic layer.1 The focus of this study would be on [FM/AFM] layered structures. In this study, exchange bias of bottom NiFe layer has been investigated as functions of etching condition of top NiFe in NiFe(3nm)/FeMn(8nm)/Al(0.3nm)/NiFe(etching), prepared by RF magnetron sputtering, etched by ion milling system of Kaufman type ion source where Ion Beam Etching parameters are beam tilt angle (20 o), beam current (20 mA), and beam acceleration voltage (500 V ~ 800 V). Magnetic properties are measured by vibrating sample magnetometer. Surface roughnesses are measured by AFM and structure analysis is performed by XRD. When the beam tilt angle is low and beam current is small, etching rate is slow then film surface is smoothed rather than damaged by bombardment of Ar ion. As the etching time passes or etching rate increases, microstrucutral defects is induced by energy delivery and then magnetic properties change rapidly. Exchange bias of bottom NiFe could be induced by the interfacial coupling between bottom NiFe and FeMn. But those coupling are dependent on the top NiFe etching condition. [1] B. Dieny, V. S. Speriosu, S. S. P. Parkin, B. A. Gurney , D. R. Wilhoit, and D. Mauri, Phys. Rev. B. 43, 1297 (1991). |
| 저자 | 임재준, 호영강, 웬충단, 김철기, 김종오 |
| 소속 | 충남대 |
| 키워드 | 이온빔 에칭; 교환바이어스 |
