| 학회 |
한국재료학회 |
| 학술대회 |
2011년 봄 (05/26 ~ 05/27, 제주 휘닉스 아일랜드) |
| 권호 |
17권 1호 |
| 발표분야 |
C. Energy and the Environment Technology(에너지 및 환경재료) |
| 제목 |
Phophorus external gettering for high quality wafer of silicon heterojunction solar cells |
| 초록 |
Minority Carrier recombination should be suppressed for high efficiency solar cells. However, impurities in the silicon bulk region deteriorate the minority carrier lifetimes, causes conversion efficiency drop. In this study, we introduced phosphorus external gettering for silicon heterojunction solar cell substrates. Gettering was undergone at 750, 800, 850 and 900℃ in furnace for 30minutes. Bulk lifetimes and calculated diffusion length were improved. We applied phosphorus gettering to silicon heterojunction solar cells. Gettered group and ungettered group were used as substrate of silicon heterojunction solar cells. After fabrication, characteristics of solar cells were analyzed. The results were observed to see the enhancement of substrate quality which directly connects with solar cell properties. |
| 저자 |
박효민, 탁성주, 김찬석, 박성은, 김영도, 김동환
|
| 소속 |
고려대 |
| 키워드 |
phosphorus gettering; Heterojunctino solar cell; impurities
|
| E-Mail |
|
