| 학회 | 한국재료학회 |
| 학술대회 | 2021년 봄 (05/12 ~ 05/14, 광주 김대중컨벤션센터) |
| 권호 | 27권 1호 |
| 발표분야 | 특별심포지엄 1. 에너지용 기능성 재료 특별심포지엄-오거나이저: 신병하(KAIST) |
| 제목 | Strategies Towards the Synthesis of Wafer Scale Single Crystal-line 2D materials—From Theoretical Prediction to Experimental Realization |
| 초록 | Wafer scale graphene single crystal the ideal for maximizing the performances of graphene-based devices and various applications, such as corrosion protection. Here we demonstrate a few routes and their experimental realizations towards the synthesis of wafer scale graphene crystal. (i) Considering the weak van der Waals interaction between graphene bulk and the surfaces of various transition metals, we showed that a single crystal graphene island may across a grain boundary (GB) of the substrate without changing its single-crystallinity. Based on this theoretical prediction, we propose that wafer scale graphene single crystal might be synthesized on a poly-crystal metal surface via nucleation suppression. [1] Such a strategy was realized by the method of feedstock local feeding during graphene CVD growth on Cu-Ni surface. [2] (ii) The preferential alignment of nucleated graphene island on a transition metal surface allows us to grow single crystal graphene on a symmetry matching catalyst surface and, therefore, wa-fer scale graphene single crystal growth might be achieved on a wafer scale single crystalline metal surface.[1,3,4] Experimentally, large area single crystal Cu (111) foils was synthesized and the realization of wafer scale graphene single crystal CVD growth was demonstrated.[5,6] (iii) Besides the (111) surface of fcc crystal and the (0001) surface of the hcp crystal, our theo-retical analysis predicts that unidirectional growth of hexagonal boron nitride on a high-index metal foil is also possible. [7] References: 1. X Zhang, Z Xu, L Hui, J Xin, F Ding, (2012), How the orientation of graphene is determined during chemical vapor deposition growth. The Journal of Physical Chemistry Letters 3, 2822-2827 2. T Wu, X Zhang, Q Yuan, J Xue, G Lu, Z Liu, H Wang, H Wang, F Ding, Q Yu, X Xie, M Jiang, (2016) Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu–Ni alloys, Nature materials 15, 43 3. J Gao, J Yip, J Zhao, BI Yakobson, F Ding, (2011) Graphene nucleation on transition metal surface: structure transformation and role of the metal step edge, Journal of the American Chemical Society 133, 5009-5015 4. Q Yuan, BI Yakobson, F Ding (2014) Edge-catalyst wetting and orientation control of graphene growth by chemical vapor deposition growth, The journal of physical chemistry letters, 5, 3093-3099 5. S Jin, M Huang, Y Kwon, L Zhang, B Li, S Oh, J Dong, D Luo, M Biswal, B V Cunning, (2018) Colossal grain growth yields single-crystal metal foils by contact-free annealing, Science 362, 1021-1025 6. X Xu, Z Zhang, J Dong, D Yi, J Niu, M Wu, L Lin, R Yin, M Li, J Zhou, S Wang, J Sun, X Duan, P Gao, Y Jiang, X Wu, H Peng, R S Ruoff, Z Liu, D Yu, E Wang, F Ding, K Liu, (2017), Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil, Science Bulletin 62, 1074-1080 7. L Wang, XZ Xu, LN Zhang, RX Qiao, MH Wu, ZC Wang, S Zhang, J Liang, ZH Zhang, YW Shan, Y Guo, MW Willinger, H Wu, QY Li, WL Wang, P Gao, SW Wu, Y Jiang, DP Yu, EG Wang, XD Bai, ZJ Wang, F Ding, KH Liu,Towards the growth of single-crystal boron nitride monolayer on Cu, https://arxiv.org/abs/1811.06688 |
| 저자 | Feng DING |
| 소속 | Institute for Basic Science & Ulsan National Institute of Science and Technology |
| 키워드 | graphene |
