| 초록 |
The current usage of CdS as a buffer layer for CIGS thin film solar cells involves an environmental issue, as it is harmful for human health. In addition, it has a light absorption loss due to its small energy band gap. Researches on the Cd-free buffer layers have been studied to overcome those issues. In2S3, Zn(O,S), and ZnMgO are the candidate materials to replace CdS. Zn(O,S) is considered as the most promising alternative substance among them because of its non-toxicity as well as its possible band gap engineering in the range of 3.0-3.7eV depending upon the ratio of O/S. The aim of this study is to fabricate Cu(In,Ga)Se2 devices with Zn(O,S) buffer layers deposited by a modified CFR process with thermal treatment at low temperatures. |
