| 학회 | 한국화학공학회 |
| 학술대회 | 2010년 봄 (04/22 ~ 04/23, 대구 EXCO) |
| 권호 | 16권 1호, p.3 |
| 발표분야 | 고분자 |
| 제목 | Next generation data storage with baroplastic block copolymer by room temperature AFM lithography |
| 초록 | In an attempt to fabricate ultrahigh-density array using block copolymer, nanopatterns are directly generated on poly(strene-block-(n-pentylmethacrylate))(PS-b-PnPMA) film using an atomic force microscope(AFM) tip at room temperature. Unlike general method of block copolymer lithography, this approach uses pressure by AFM tip without heating. PS-b-PnPMA film is easily patterned at room temperature because of its baroplastic property that enables processing at a relatively lower pressure and temperature by microphase transition. Cross-sectional transmission electron microscopy(TEM) image clearly showed that nanopatterns were achieved through a microphase transition. Finally, fabricated nanopatterns are transformed into electrical signals by using piezoelectric sensor and showed repeated erasing and rewriting steps. This demonstration of a pressure-based phase-change memory at room temperature shows great possibility of next-generation ultrahigh-density data storage media. Acknowledgement: This work was supported by the National Creative Research Initiative Program supported by the National Research Foundation of Korea (NRF) and the second stage of the BK 21 program of Korea. |
| 저자 | 조아라, 김진곤 |
| 소속 | POSTECH |
| 키워드 | data storage; baroplastic block copolymer; AFM lithography |
| 원문파일 | 초록 보기 |
